Electronic board, method of manufacturing the same, and electronic device

ABSTRACT

An electronic board includes a substrate on which is formed an electronic circuit having a connection terminal; a stress-relaxation layer formed on the substrate; a rearrangement wiring for the connection terminal disposed at a top side of the stress-relaxation layer; and a capacitor. The capacitor has a first electrode that is disposed between the substrate and the stress-relaxation layer, a second electrode that is disposed at the top side of the stress-relaxation layer, and a dielectric material that is disposed between the first electrode and the second electrode. The first electrode and/or the second electrode has a corrugated surface facing the dielectric material.

CROSS-REFERENCE TO RELATED APPLICATION

This is a divisional application of U.S. Ser. No. 11/440,377 filed May24, 2006, which claims priority to Japanese Patent Application No.2005-180401, filed Jun. 21, 2005, the contents of which are incorporatedherein by reference.

BACKGROUND

1. Technical Field

The present invention relates to an electronic board, a method ofmanufacturing the electronic board, and an electronic device.

2. Related Art

Electronic devices such as mobile telephones and personal computers havemounted therein a semiconductor chip (electronic board) whereon anelectronic circuit is formed. Such a semiconductor chip is used withpassive elements such as resistors, inductors and capacitors. JapaneseUnexamined Patent Application, First Publication Nos. 2000-340955,2000-353875, and 2001-156456 disclose techniques of forming a capacitoron a substrate on which a semiconductor chip is mounted. In addition,Japanese Unexamined Patent Application, First Publication No. H02-162820discloses a technique of forming a MOS capacitor on a semiconductorchip.

Since techniques to form a capacitor on a semiconductor chip-mountingsubstrate entail the capacitor being disposed away from transistors onthe semiconductor chip, it is difficult to ensure the responsecharacteristics and high-frequency characteristics of the capacitor. Inaddition, since a gate film is used as a dielectric layer in techniquesto manufacture a MOS capacitor on a semiconductor chip, it is difficultto ensure the capacitance value of a capacitor. Moreover, sincetransistors cannot be formed in the capacitor formation region, adedicated occupancy area is needed for the capacitor formation region,which leads to an increase in the size of the semiconductor chip onwhich a capacitor is formed.

SUMMARY

An advantage of some aspects of the invention is to provide anelectronic board having excellent electrical characteristics, amanufacturing method therefor, and an electronic device employing theelectronic board.

An electronic board according to a first aspect of the invention,includes: a substrate on which is formed an electronic circuit having aconnection terminal; a stress-relaxation layer formed on the substrate;a rearrangement wiring for the connection terminal, disposed at a topside of the stress-relaxation layer; and a capacitor having a firstelectrode that is disposed between the substrate and thestress-relaxation layer; a second electrode that is disposed at the topside of the stress-relaxation layer; and a dielectric material that isdisposed between the first electrode and the second electrode, whereinthe first electrode and/or the second electrode has a corrugated surfacefacing the dielectric material. It is preferable that thestress-relaxation layer include the dielectric material.

According to this constitution, the surface area of the first electrodeand/or the second electrode is greater compared to the case of the innersurface of the first electrode and/or the second electrode being a flatsurface, therefore, the capacitance value of the capacitor increases.Accordingly, an electronic board having excellent electricalcharacteristics is provided. Also, since the contact area between thefirst electrode and/or the second electrode and the adjacent layerincreases, the adhesion strength between the two rises. In addition, itis possible to form transistors in the capacitor formation region, andso an increase in size of the semiconductor chip accompanying thecapacitor formation is averted.

Also, it is preferable that a projection electrode be formed on thesurface of the second electrode.

This constitution allows for the shortest wiring length between thecapacitor and the projection electrode, which is advantageous forimpedance matching. Accordingly, an electronic board having excellentelectrical characteristics can be provided.

Also, it is preferable that a passivation film of the substrate bedisposed between the substrate and the stress-relaxation layer, and thefirst electrode be disposed between the substrate and the passivationfilm.

Also, the first electrode may serve as the connection terminal of theelectronic circuit.

This constitution allows for the shortest wiring length from theelectronic circuit to the capacitor and can minimize parasiticcapacitance and stub length due to wiring. Accordingly, an electronicboard having excellent electrical characteristics can be provided.

Also, it is preferable that the stress-relaxation layer be made of amaterial in which ceramic powder is dispersed in the dielectricmaterial.

Dispersing the ceramic powder, which is a high dielectric material, canraise the dielectric constant of the capacitor. Accordingly, anelectronic board having excellent electrical characteristics can beprovided.

Also, it is preferable that the dielectric material be a resin materialhaving photosensitivity.

This constitution enables the stress-relaxation layer to be accuratelyformed using photolithography, so that a capacitor having the desiredcharacteristics is formed. Accordingly, an electronic board havingexcellent electrical characteristics can be provided.

A method of manufacturing an electronic board according to a secondaspect of the invention, includes: forming a substrate on which isformed an electronic circuit having a connection terminal; forming astress-relaxation layer on a substrate; forming a first electrode, thefirst electrode disposed between the substrate and the stress-relaxationlayer; forming a second electrode, the second electrode disposed at atop side of the stress-relaxation layer; arranging a dielectric materiallayer on the substrate, the dielectric material disposed between thefirst electrode and the second electrode; forming a corrugated surfaceon at least one of the stress-relaxation layer and the dielectricmaterial layer, the corrugated surface being adjacent to the firstelectrode and/or the second electrode; and forming rearrangement wiringfor the connection terminal, the rearrangement wiring disposed at thetop side of the stress-relaxation layer.

According to this constitution, the inner surface of the first electrodeand/or the second electrode becomes a corrugated surface, and so thesurface area of the first electrode and/or the second electrode isgreater compared to the case of the inner surface being a flat surface,therefore, the capacitance value of the capacitor increases.Accordingly, an electronic board having excellent electricalcharacteristics is provided. Also, the adhesion strength between thefirst electrode and/or the second electrode and the adjacent layerthereto increases.

Also, the dielectric material layer may be the stress-relaxation layer.According to this constitution, a capacitor can be formed at a low cost.

Formation of the corrugations can be performed by, for example,photolithography, etching, or a transfer method. Thereby, thecorrugations can be easily and reliably formed.

An electronic device according to the present invention is characterizedby being provided with the aforementioned electronic board.

This constitution can provide an electronic device having excellentelectrical characteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is an explanatory drawing of the rearrangement wiring, and aplan view of the semiconductor chip.

FIG. 1B is an explanatory drawing of the rearrangement wiring, and alongitudinal sectional view of the rearrangement wiring along line B-Bin FIG. 1A.

FIG. 2A is a longitudinal sectional view of the semiconductor chipaccording to the first embodiment.

FIG. 2B is an enlarged longitudinal sectional view of the semiconductorchip according to the first embodiment.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, and 3H are process drawings of themanufacturing method of a semiconductor chip according to the firstembodiment.

FIG. 4A is a longitudinal sectional view of the semiconductor chipaccording to the second embodiment.

FIG. 4B is an enlarged longitudinal sectional view of the semiconductorchip according to the second embodiment.

FIG. 5A is a longitudinal sectional view of the semiconductor chipaccording to the third embodiment.

FIG. 5B is an enlarged longitudinal sectional view of the semiconductorchip according to the third embodiment.

FIG. 6A is a longitudinal sectional view of the semiconductor chipaccording to the fourth embodiment.

FIG. 6B is a longitudinal sectional view of a modification example ofthe semiconductor chip according to the fourth embodiment.

FIG. 7 is a longitudinal sectional view of the semiconductor chipaccording to the fifth embodiment.

FIG. 8 is a longitudinal sectional view of the semiconductor chipaccording to the sixth embodiment.

FIG. 9 is a perspective view of a mobile telephone.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinbelow, the embodiments of the present invention shall be explainedwith reference to the accompanying drawings. The dimensional scale ofthe constituent elements in the drawings has been altered to aidrecognition of the elements.

First Embodiment

The semiconductor chip (electronic board) according to the presentembodiment is one in which a stress-relaxation layer is formed on thesurface of a semiconductor chip having an electronic circuit formedthereon, with rearrangement wiring for connection terminals of theelectronic circuit formed on the surface of the stress-relaxation layer.The rearrangement wiring for the connection terminals and thestress-relaxation layer shall be initially explained.

Rearrangement Wiring

FIG. 1A and FIG. 1B are explanatory drawings of the rearrangementwiring, with FIG. 1A being a plan view of the semiconductor chip, andFIG. 1B being a side sectional view of the rearrangement wiring alongline B-B in FIG. 1A. As shown in FIG. 1B, a passivation film 8 forprotecting the electronic circuit is formed on the surface of thesemiconductor chip on which the electronic circuit is formed. Aconnection terminal 62 for external electrical connection of theelectronic circuit is formed on the surface of the semiconductor chip.The passivation film 8 has an opening that exposes the surface of theconnection terminal 62.

As shown in FIG. 1A, a plurality of the connection terminals 62 arearranged along the edge portions of a semiconductor chip 1. The pitchbetween adjacent connection terminals 62 becomes extremely narrow as thesize of the semiconductor chip is reduced. As a result, mounting thesemiconductor chip 1 on an opposite substrate leads to the possibilityof short-circuiting between adjacent connection terminals 62.Rearrangement wiring 64 for the connection terminals 62 is thereforeformed in order to increase the pitch between the connection terminals62.

Specifically, a plurality of pads 63 are arranged in a matrix in thecenter portion of the surface of the semiconductor chip 1. Therearrangement wiring 64 of the connection terminals 62 is connected tothe pads 63. The connection terminals 62 are thereby drawn into thecenter portion of the semiconductor chip 1 so that the narrow pitch ofthe connection terminals 62 is widened. Wafer-level Chip Scale Package(W-CSP) technology is used to form such semiconductor chips, whereby therearrangement wiring and resin sealing are collectively applied on awafer, which is then divided into individual chips.

When forming semiconductor chips using W-CSP technology, it is necessaryto relax the stress generated by the difference in the thermal expansioncoefficients of the opposite substrate that is mounted on thesemiconductor chip and the semiconductor chip. As shown in FIG. 1B,there is formed in the center portion of the surface of thesemiconductor chip a stress-relaxation layer 30 that consists ofphotosensitive polyimide or photosensitive polymer such as benzo cyclobutane (BCB) and phenolic novolac resin. The aforementioned pads 63 arethen formed on the surface of the stress-relaxation layer 30.

A bump 78 is formed on the surface of each pad 63. This bump 78 is, forexample, a soldering bump and is formed by a printing method or thelike. This bump 78 is mounted on the connection terminal of an oppositesubstrate by reflow soldering and flip chip bonding (FCB) and the like.It is also possible to mount the pads 63 of the semiconductor chip 1 onthe connection terminals of the opposite substrate by means of ananisotropic conductive film and the like.

Electronic Substrate Provided with a Capacitor

FIGS. 2A and 2B show the semiconductor chip according to the firstembodiment. FIG. 2A is a side sectional view of the portioncorresponding to the line B-B of FIG. 1A, and FIG. 2B is an enlargedview of the capacitor C. As shown in FIG. 2A, the semiconductor chip(electronic board) according to the first embodiment has a firstelectrode 10 that is formed at the back side of the stress-relaxationlayer 30; a second electrode 20 formed at the top side of thestress-relaxation layer 30; and the stress-relaxation layer 30, whichconsists of a dielectric material, disposed between the first electrode10 and the second electrode 20. A capacitor C is thus formed by thefirst electrode 10, the second electrode 20, and the stress-relaxationlayer 30.

As shown in FIG. 2A, a first layer wiring 12 consisting of a conductivematerial such as Cu is extended from the surface of a connectionterminal 11 to the central portion of the surface of the semiconductorchip 1. The distal end of the first layer wiring 12 is disposed so as tooppose a second layer wiring 22, sandwiching the stress-relaxation layer30 therebetween. The first layer wiring 12 is formed on the surface ofan underlying layer described below, the underlying layer being omittedfrom FIG. 2.

The stress-relaxation layer 30 is formed so as to cover the distal endportion of the first layer wiring 12. The stress-relaxation layer 30 asstated above is composed of a dielectric material such as photosensitivepolyimide or photosensitive polymer such as benzo cyclo butane (BCB) andphenolic novolac resin.

The second layer wiring 22, which consists of a conductive material suchas Cu, is formed on the stress-relaxation layer 30. The second layerwiring 22 is formed in an aforementioned pad shape, being disposed so asto oppose the distal end portion of the first layer wiring 12,sandwiching the stress-relaxation layer 30 therebetween. The secondlayer wiring 22 is formed on the surface of an underlying layerdescribed below, the underlying layer being omitted from FIGS. 2A and2B.

When the semiconductor chip 1 is viewed from a direction perpendicularto its surface (plan view), the capacitor C is formed in the regionwhere the first layer wiring 12 and the second layer wiring 22 overlap(overlap region). That is, the first layer wiring 12 in the overlapregion functions as a first electrode 10, and the second layer wiring 22in the overlap region functions as a second electrode 20. Thestress-relaxation layer 30 consisting of a dielectric material isdisposed between the first electrode 10 and the second electrode 20,thereby forming the capacitor C.

As shown in FIG. 2B, corrugations 34 are formed on the surface of thestress-relaxation layer 30. The corrugations 34 may be of any shape,such as dot shaped or line shaped, and the pitch and height of thecorrugations 34 may be arbitrarily set. The corrugations 34 are formedin at least a portion of the overlap region, and preferably formed overthe overlap region, and may also be formed over the entire surface ofthe stress-relaxation layer 30. The second layer wiring 22 is formed onthe surface of the stress-relaxation layer 30, with the inner surface ofthe second electrode 20 being a corrugated surface. Since the surfacearea of the second electrode 20 is thereby greater compared to the caseof the inner surface being a flat surface, the capacitance value of thecapacitor can be increased.

Returning to FIG. 2A, a bump (projection electrode) 28 mentioned aboveis formed on the second layer wiring 22 that is formed in a pad shape.The capacitor C is disposed between the electronic circuit of thesemiconductor chip and the opposite substrate. Forming the bump 28 onthe surface of the second electrode 20 allows for the shortest wiringlength from the capacitor C to the bump 28, which is advantageous forimpedance matching.

Ceramic powder, which is a high dielectric material, may be dispersed(kneaded) into the dielectric material constituting thestress-relaxation layer 30. Specifically, ceramic powder such as TiBaO₃or Al₂O₃ may be used. By adjusting the powder distribution ratio andparticle size distribution, a capacitor having the desired capacitanceand high-frequency characteristics can be obtained. For example, finelyfilling powder with small particles can raise the dielectric constant ofthe capacitor. In addition, different types of high dielectric materialsmay be mixed together. For example, by suitably mixing a material havinga positive temperature characteristic with a material having a negativetemperature characteristic at a suitable ratio, the apparent temperaturecharacteristic can be flattened. Moreover, using two or more types ofresins enables resin velocity adjustment. In addition, by appropriatelyselecting the method of applying the resin, thickness control of thestress-relaxation layer 30 can be easily performed.

A dielectric material layer may be formed separate to thestress-relaxation layer 30 between the first electrode 10 and the secondelectrode 20. It is preferable to form a ceramic material layer of ahigh dielectric constant by the sol-gel method. This constitution canfurther raise the dielectric constant of the capacitor.

Manufacturing Method of the Electronic Substrate

Next, the method of manufacturing the aforementioned semiconductor chipshall be explained using FIGS. 3A to 3H.

FIGS. 3A to 3H are process drawings of the method of manufacturing thesemiconductor chip according to the present embodiment. As shown in FIG.3A, the passivation film 8 for protecting the electronic circuit and theconnection terminal 11 for external electrical connection of theelectronic circuit are formed on the surface of the semiconductor chipon which the electronic circuit is formed. Also, an opening in thepassivation film 8 is formed as the position of the surface of theconnection terminal 11.

As first shown in FIG. 3A, an underlying film 14 is formed over entiresurface of the semiconductor chip 1. The underlying film 14 consists ofa barrier layer as the bottom layer and a seed layer as the top layer.The seed layer, formed of Cu or the like to a thickness of severalhundred nm or thereabout, functions as an electrode when forming thefirst layer wiring by an electrolytic plating method. The barrier layer,formed of TiW or TiN to a thickness of 100 nm or thereabout, preventsdiffusion of the Cu to the connection terminals made of Al and the like.It is possible to form these layers using a physical vapor deposition(PVD) method such as vacuum evaporation, sputtering or ion plating, oran ion metal plasma (IMP) method.

As shown next in FIG. 3B, a resist 90 is applied to the surface of theunderlying film 14, and an opening of the resist 90 is formed in theformation region of the first layer wiring by photolithography.

As shown next in FIG. 3C, electrolytic Cu plating is performed with theseed layer of the underlying film 14 serving as an electrode, and thefirst layer wiring 12 is formed by embedding Cu in the opening formed bythe resist 90.

The resist is then stripped away, as shown next in FIG. 3D.

As shown next in FIG. 3E, etching of the underlying film 14 is performedwith the first layer wiring 12 serving as a mask. It is possible toemploy reactive ion etching (RIO) for this etching. While both the firstlayer wiring 12 and the seed layer of the underlying film 14 areconstituted of Cu, since the first layer wiring 12 is sufficientlythicker than the seed layer of the underlying film 14, the seed layercan be completely removed by the etching.

Next, as shown in FIG. 3F, the stress-relaxation layer 30 is formed soas to cover the distal end portion of the first layer wiring 12. Thestress-relaxation layer 30 is formed in the center portion of thesurface of the semiconductor chip using a printing method orphotolithography. If a resin material that has photosensitivity isadopted as the dielectric material constituting the stress-relaxationlayer 30, patterning of the stress-relaxation layer 30 can be readilyand accurately performed using photolithography.

Corrugations are formed on the surface of the stress-relaxation layer30. It is preferable that the formation of the corrugations be performedby etching of the surface of the stress-relaxation layer 30.Specifically, plasma etching is performed for a brief duration byintroducing etching gas such as O₂ gas. In the event of performingaffinity processing on the surface of the stress-relaxation layer 30 inorder to ensure affinity with the second layer wiring of the upperlayer, corrugations are often formed on the surface of thestress-relaxation layer 30 by that affinity processing. Even with plasmaetching that entails introduction of O₂ gas and the like, corrugationscan be formed on the surface of the stress-relaxation layer 30 whileensuring affinity with the second layer wiring.

It is also possible to form the corrugations using a transfer method(nano imprint) that transfers corrugated shapes onto the surface of thestress-relaxation layer 30. In this case, it is preferable to use athermoplastic material as a component of the stress-relaxation layer 30.While heating a transfer mold on which the corrugations are reversiblyformed, it is pressed onto the surface of the stress-relaxation layer30. Thereafter, the stress-relaxation layer 30 is cooled, and thetransfer mold is removed, revealing the corrugations to be formed on thesurface of the stress-relaxation layer 30.

It is also possible to form the corrugations by photolithography. Inthis case, it is possible to form the corrugations on the surface of thestress-relaxation layer 30 substantially simultaneously with patterningof the stress-relaxation layer 30, thereby simplifying the manufacturingstep. As the mask for the photolithography, a mask is adopted in whichthe corrugation formation region is a half-tone region. In addition,comparatively small corrugations made by the aforementioned etching ortransfer method may be formed on the surfaces of the comparatively largecorrugations formed by photolithography.

As shown next in FIG. 3G, the second layer wiring 22 and an underlyinglayer 24 thereof are formed on the surface of the stress-relaxationlayer 30. The specific formation method is identical to the method offorming the first layer wiring 12 and the underlying film 14 thereof. Bytrimming the thus formed second layer wiring 22 with a laser or thelike, it is possible to performing tuning of the capacitorcharacteristics.

As shown next in FIG. 3H, a soldering bump is mounted on the surface ofthe second layer wiring 22 to form the bump 28.

The second layer wiring 22 is formed substantially simultaneously as therearrangement wiring 64 shown in FIGS. 1A and 1B. That is, the secondelectrode 20 shown in FIG. 3H can be accurately formed by using platingor photolithography. Thereby, a capacitor C can be formed to have thedesired characteristics. In addition, since the capacitor C is disposednear the electronic circuit of the semiconductor chip 1, the responsecharacteristics and high-frequency characteristics of the capacitor Ccan be ensured. Moreover, by utilizing the stress-relaxation layer 30 asa dielectric layer, the capacitance value of the capacitor C can befreely set. Accordingly, the semiconductor chip 1 having excellentelectrical characteristics can be provided.

Since the second layer wiring 22 is formed substantially simultaneouslyas the rearrangement wiring, and the stress-relaxation layer 30 is usedas a dielectric layer, the capacitor C can be formed at a low cost. Inaddition, since transistors can be formed in the capacitor formationregion, an occupancy region for the capacitor formation region is notrequired, so that there is no increase in the size of a semiconductorchip having a capacitor formed thereon.

In the semiconductor chip according to the present embodiment, the innersurface of the second electrode 20 is a corrugated surface. According tothis embodiment, compared to the case of the inner surface being a flatsurface, the surface area of the second electrode 20 in the same flatsurface region increases, thereby increasing the capacitance value ofthe capacitor C. Accordingly, the semiconductor chip 1 having excellentelectrical characteristics can be provided. In addition, since thecontact surface area between the stress-relaxation layer 30 and thesecond electrode 20 increases, the adhesion strength between thestress-relaxation layer 30 and the second electrode 20 can be increased.

Second Embodiment

FIGS. 4A and 4B show the semiconductor chip according to the secondembodiment. FIG. 4A is a side sectional view of the portioncorresponding to the line B-B in FIGS. 1A and 1B, and FIG. 4B is amagnified view of the capacitor C portion in FIG. 4A. While in the firstembodiment the inner surface of the first electrode 10 is a flatsurface, as shown in FIG. 4B the semiconductor chip (electronic board)according to the second embodiment differs on the point of the innersurface of the first electrode 10 being a corrugated surface. Detailedexplanations for those constituent elements identical to the firstembodiment shall be omitted.

In the second embodiment, corrugations 18 are formed on the surface ofthe first layer wiring 12. It is possible to form the corrugations 18 byetching the surface of the first layer wiring 12. Specifically, plasmaetching is performed for a brief duration by introducing etching gassuch as O₂ gas. In the event of performing affinity processing on thesurface of the first layer wiring 12 in order to ensure affinity withthe stress-relaxation layer 30 of the upper layer, corrugations areoften formed on the surface of the stress-relaxation layer 30 by thataffinity processing. Even with plasma etching that entails introductionof O₂ gas and the like, corrugations 18 can be formed on the surface ofthe first layer wiring 12 while ensuring affinity with thestress-relaxation layer 30.

In the event of forming the first layer wiring 12 by electrolytic Cuplating, it is also possible to form the first layer wiring 12 with thecorrugations 18 formed on the surface thereof by raising the currentdensity. In the event of forming the first layer wiring 12 bysputtering, it is possible to form the first layer wiring 12 with thecorrugations 18 formed on the surface thereof by raising the sputterrate or performing sputtering at a low temperature.

Thus, in the semiconductor chip according to the second embodiment, theinner surface of the first electrode 10 is made to be a corrugatedsurface. Thereby, the surface area of the first electrode 10 is greatercompared to the case of the inner surface being a flat surface, whichcan increase the capacitance value of the capacitor C. In addition,since the contact surface area between the stress-relaxation layer 30and the first electrode 10 increases, the adhesion strength between thefirst electrode 10 and the stress-relaxation layer 30 can be increased.

In the second embodiment, the inner surface of the second electrode 20is also made to be a corrugated surface, similar to the firstembodiment. Thereby, the surface area of the second electrode 20 isgreater compared to the case of the inner surface being a flat surface,which can further increase the capacitance value of the capacitor C.Accordingly, the semiconductor chip having excellent electricalcharacteristics can be provided.

Third Embodiment

FIGS. 5A and 5B show the semiconductor chip according to the thirdembodiment. FIG. 5A is a side sectional view of the portioncorresponding to the line B-B in FIGS. 1A and 1B, and FIG. 5B is amagnified view of the capacitor C portion in FIG. 5A. the semiconductorchip (electronic board) according to the third embodiment differs fromthe aforementioned embodiments on the point of corrugations being formedon the surface of a first stress-relaxation layer 31 disposed on theback surface of the first electrode 10, and corrugations being formed onthe surface of the first electrode 10 in accordance with thecorrugations on the first stress-relaxation layer 31. Detailedexplanations for those constituent elements similar to the firstembodiment shall be omitted.

As shown in FIG. 5A, in the semiconductor chip 1 according to the thirdembodiment, the first stress-relaxation layer 31 is formed in the centerportion of the surface, and a second stress-relaxation layer 32 isformed on the surface of the first stress-relaxation layer 31. Also, thefirst layer wiring 12 is extended from the surface of the connectionterminal 11 to the surface of the first stress-relaxation layer 31, andthe second layer wiring 22 is formed on the surface of the secondstress-relaxation layer 32. The capacitor C is formed in the regionwhere, in the plan view, first layer wiring 12 and the second layerwiring 22 overlap (overlap region). That is, the first layer wiring 12in the overlap region functions as the first electrode 10, and thesecond layer wiring 22 in the overlap region functions as the secondelectrode 20. The second stress-relaxation layer 32 consisting of adielectric material is disposed between the first electrode 10 and thesecond electrode 20, thereby forming the capacitor C.

As shown in FIG. 5B, corrugations 33 are formed on the surface of thefirst stress-relaxation layer 31 disposed on the back side of the firstelectrode 10. The specific formation method is similar to that for thefirst embodiment. Corrugations 18 are formed on the surface of the firstlayer wiring 12 in accordance with the corrugations 33 on the firststress-relaxation layer 31. Thereby, the inner surface of the firstelectrode 10 becomes a corrugated surface, which can increase thecapacitance value of the capacitor C similarly to the second embodiment.In addition, the adhesion strength between the first stress-relaxationlayer 31 and the first electrode 10 and the adhesion strength betweenthe first electrode 10 and the second stress-relaxation layer 32 canboth be increased.

The third embodiment is a constitution that forms the corrugations 33 onthe surface of the first stress-relaxation layer 31 disposed on the backside of the first electrode 10, and forms corrugations 18 on the surfaceof the first layer wiring 12 in accordance with the corrugations 33.Therefore, the inner surface of the first electrode 10 can be readilyand accurately made into a corrugated surface.

Fourth Embodiment

FIG. 6A is a side sectional view of the semiconductor chip according tothe fourth embodiment. While in the first embodiment the first layerwiring that is extended from the connection terminal functions as thefirst electrode, the fourth embodiment differs on the point of theconnection electrode 11 functioning as the first electrode 10 of thecapacitor C. Detailed explanations for those constituent elementssimilar to the first embodiment shall be omitted.

In the fourth embodiment, the stress-relaxation layer 30 is formed so asto cover the connection terminal 11. For that reason, a portion of thestress-relaxation layer 30 is either extended to the edge part of thesurface of the semiconductor chip 1, or the connection terminal 11 isformed in advance toward the center portion of the semiconductor chip 1.The second layer wiring 22 is formed on the surface of thestress-relaxation layer 30 in the similar manner as in the firstembodiment.

The capacitor C is formed in the region where in the plan view theconnection terminal 11 and the second layer wiring 22 overlap (overlapregion). That is, the connection terminal 11 in the overlap regionfunctions as the first electrode 10, and the second layer wiring 22 inthe overlap region functions as the second electrode 20. Thestress-relaxation layer 30 consisting of a dielectric material isdisposed between the first electrode 10 and the second electrode 20,thereby forming the capacitor C.

In the fourth embodiment, since the connection terminal 11 functions asthe first electrode 10 of the capacitor C, the capacitor C can be formedjust proximal to transistors contained in the electronic circuit of thesemiconductor chip. Therefore, the wiring length from the transistor tothe capacitor becomes the shortest, which can minimize the parasiticcapacitance and stub length due to wiring. In particular, since there isan improvement in the electrical characteristics in the high-frequencyregion (in terms of loss, noise radiation), the charge-dischargecharacteristics of the capacitor also improve, which allows fordownsizing of the capacitor. Accordingly, the electrical characteristicsof the entire system can be improved, and a reduction in size can berealized.

FIG. 6B shows a modification example of the semiconductor chip accordingto the fourth embodiment. In this modification example, an internalwiring 11 a of the electronic circuit on the semiconductor chip isformed on the back surface of the passivation film 8. The capacitor C isformed in the region where in the plan view the internal wiring 11 a andthe second layer wiring 22 overlap (overlap region). That is, theinternal wiring 11 a in the overlap region functions as the firstelectrode 10, and the second layer wiring 22 in the overlap regionfunctions as the second electrode 20. The stress-relaxation layer 30 andthe passivation film 8 are disposed between the first electrode 10 andthe second electrode 20, thereby forming the capacitor C.

In this modification example, there is no need to make an opening in thepassivation film 8 at the surface of the internal wiring 11 a, and sothe manufacturing cost can be lowered.

By making the inner surface of the second electrode 20 a corrugatedsurface similarly to the first embodiment, the capacitance value of thecapacitor C can be increased. Also, by making the inner surface of thefirst electrode 10 a corrugated surface similarly to the second andthird embodiments, the capacitance value of the capacitor C can beincreased. Accordingly, the electronic board 1 having excellentelectrical characteristics can be provided.

Fifth Embodiment

FIG. 7 is a side sectional view of the semiconductor chip according tothe fifth embodiment. While in the first embodiment the capacitor isdisposed between the electronic circuit on the semiconductor chip andthe opposite substrate, the fifth embodiment differs on the point of thecapacitor being disposed within the electronic circuit on thesemiconductor chip. Detailed explanations for those constituent elementsidentical to the first embodiment shall be omitted.

In the fifth embodiment, the first layer wiring 12 is extended from thesurface of the first connection terminal 11. The stress-relaxation layer30 is formed so as to cover the distal end portion of the firstconnection terminal 11. The second layer wiring 22 is extended from asecond connection terminal 21, which is separate from the firstconnection terminal 11, to the surface of the stress-relaxation layer30.

The capacitor C is formed in the region where, in the plan view, thefirst layer wiring 12 and the second layer wiring 22 overlap (overlapregion). That is, the first layer wiring 12 in the overlap regionfunctions as the first electrode 10, and the second layer wiring 22 inthe overlap region functions as the second electrode 20. Thestress-relaxation layer 30 consisting of a dielectric material isdisposed between the first electrode 10 and the second electrode 20,thereby forming the capacitor C. This results in a state in which thecapacitor C is disposed between the first connection terminal 11 and thesecond connection terminal 21, both being drawn from the electroniccircuit. Thus, the capacitor can be disposed within the electroniccircuit, and not just between the electronic circuit and the oppositesubstrate.

As shown in FIG. 5A, the first electrode 10 may be formed on the surfaceof the first stress-relaxation layer 31, the second electrode 20 may beformed on the surface of the second stress-relaxation layer 32, and thesecond stress-relaxation layer 32 may be used as a dielectric layer.Also, the connection terminal 11 may be made to function as the firstelectrode 10, as shown in FIG. 6A, in place of the first layer wiring12. Also, the internal wiring 11 a may be made to function as the firstelectrode 10 as shown in FIG. 6B.

By making the inner surface of the second electrode 20 a corrugatedsurface similarly to the first embodiment, the capacitance value of thecapacitor C can be increased. Also, by making the inner surface of thefirst electrode 10 a corrugated surface similarly to the second andthird embodiments, the capacitance value of the capacitor C can beincreased. Accordingly, the electronic board 1 having excellentelectrical characteristics can be provided.

Sixth Embodiment

FIG. 8 is a side sectional view of the semiconductor chip according tothe sixth embodiment.

The semiconductor chip according to the sixth embodiment adds thecapacitor structure shown in FIG. 6A to the rearrangement wiringstructure shown in FIGS. 1A and 1B. Thereby, the first connectionterminal 11 and the second connection terminal 21 of the semiconductorchip 1 become connected to a single mounting terminal for the oppositesubstrate (not shown). This results in a state in which the capacitor Cis disposed between the mounting terminal and the first connectionterminal 11.

Thus a capacitor can be disposed in various modes by combining thestructures of the aforementioned embodiments.

Electronic Device

Next an example of an electronic device provided with the aforementionedsemiconductor chip (electronic board) shall be explained with referenceto FIG. 8.

FIG. 9 is a perspective drawing of a mobile telephone. Theaforementioned semiconductor chip is disposed inside the case of amobile telephone 300.

The aforementioned semiconductor device is applicable to variouselectronic devices in addition to mobile phones. For example, it can beapplied to a liquid crystal projector, a multimedia PC, an engineeringworkstation (EWS), a pager, a word processor, a television, a viewfindervideo tape recorder or a monitor direct view video tape recorder, apersonal digital assistant, a desktop electronic calculator, a carnavigation device, a point of sales terminal (POS), a device including atouch panel, and the like.

While preferred embodiments of the invention have been described andillustrated above, it should be understood that these are exemplary ofthe invention and are not to be considered as limiting. Additions,omissions, substitutions, and other modifications can be made withoutdeparting from the spirit or scope of the present invention.Accordingly, the invention is not to be considered as being limited bythe foregoing description, and is only limited by the scope of theappended claims.

For example, a capacitor was formed on the surface of the semiconductorchip in the embodiments disclosed above. However, the capacitor may beformed on the back surface of the semiconductor chip, and conductionwith the surface may be ensured by through electrodes. In addition,although the capacitor was formed in a semiconductor chip on which anelectronic circuit was formed in each of the aforementioned embodiments,a capacitor may also be formed on an electronic board consisting of aninsulating material.

1. A method of manufacturing an electronic board, comprising: forming asubstrate on which is formed an electronic circuit having a connectionterminal; forming a stress-relaxation layer on a substrate; forming afirst electrode, the first electrode disposed between the substrate andthe stress-relaxation layer; forming a second electrode, the secondelectrode disposed at a top side of the stress-relaxation layer;arranging a dielectric material layer on the substrate, the dielectricmaterial disposed between the first electrode and the second electrode;forming a corrugated surface on at least one of the stress-relaxationlayer and the dielectric material layer, the corrugated surface beingadjacent to the first electrode and/or the second electrode; and formingrearrangement wiring for the connection terminal, the rearrangementwiring disposed at the top side of the stress-relaxation layer.
 2. Amethod of manufacturing an electronic board according to claim 1,wherein the dielectric material layer is the stress-relaxation layer. 3.A method of manufacturing an electronic board according to claim 1,wherein formation of the corrugated surface is performed byphotolithography.
 4. A method of manufacturing an electronic boardaccording to claim 1, wherein formation of the corrugated surface isperformed by etching.
 5. A method of manufacturing an electronic boardaccording to claim 1, wherein formation of the corrugated surface isperformed by a transfer method.
 6. A method of manufacturing anelectronic board, comprising: forming a substrate on which is formed anelectronic circuit having a connection terminal; forming a firststress-relaxation layer on a substrate; forming a secondstress-relaxation layer on the first stress-relaxation layer; forming afirst electrode, the first electrode disposed between the firststress-relaxation layer and the second stress-relaxation layer; forminga second electrode, the second electrode disposed at a top side of thesecond stress-relaxation layer; arranging a dielectric material layer onthe substrate, the dielectric material disposed between the firstelectrode and the second electrode; and forming a corrugated surface onat least one of the second stress-relaxation layer and the dielectricmaterial layer, the corrugated surface being adjacent to the firstelectrode and/or the second electrode.
 7. A method of manufacturing anelectronic board according to claim 6, further comprising, forming acorrugated surface on the first stress-relaxation layer and thedielectric material layer, the corrugated surface being adjacent to thefirst electrode and/or the second electrode.
 8. An electronic devicecharacterized by being provided with the electronic board recited inclaim 1.